Primarily dedicated to microfabrication processing and device characterization, our Micro/Nano-Fabrication Lab teaches students how to fabricate devices in silicon. Instrumentation includes a Unitron Mask Alignment Microscope (MAM).
Lab experience offers a series of experiments which examine various unit fabrication processes. Additionally, students learn to integrate our current semiconductor processing capabilities to obtain and characterize operational bipolar junction transistors. Hands-on instruction focuses on teaching scientific principles dictating which process operations are required and what these operations accomplish. Capabilities include wafer characterization and inspection, cleaning, oxidation, photolithography, wet and dry etching, pattern transfer inspection, dopant deposition and diffusion, and electrical testing and process simulation.
Lab Capabilities – Process Tools
- Wet Bench with hot plates for batch cleaning, etching, and resist removal
- Ultra Sonics Bath (tabletop)
- Millipore Super Q Water Polishing System
- March CS-1701 Reactive Ion Etcher
- Batch spin, rinse, dryers
- 4” – Semitool Single Stack SRD
- 30 mm – Fluoroware
- Karl Suss MJB-3 Mask Aligner
- Manual Unitron Mask Alignmment Microscope (MAM) with split field objectives
- Pattern transfer tools
- Headway Research Model PWM 32 Photo Resist Spinner
- Various ovens and inspection microscope
- Bruce Technologies Model 7351C Semiconductor Process Controller
- Tempress 4 tube stack for four inch wafers suitable for oxidation and doping of silicon wafers
- Four point probe to monitor doping with measured sheet resistance.
- Hot point probe
- RCA film thickness monitor
- Probe stations and Tektronix 370 Curve Tracer used for diode & transistor characterization.
- Angle lap-stain junction depth
Silvaco: Athena for process simulation, Atlas for device characteristics
This lab supports Micro-Electromechanical Systems I and II(ME 337,339), Senior Projects I and II(EE 391, 392),Microfabrication Lab(EE 381) and CADD for Microfabrication Lab (EE 373).